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【PDF】(54) MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE

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A method for producing a silicon carbide single crystal substrate according to the present invention includes steps of: (A) preparing a silicon carbide

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A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21)

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【PDF】Monocrystalline Silicon Carbide Nanoelectromechanical Systems

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Represented at 1 is a crucible consisting of SiC con This invention relates to a method of pulling mono crystalline silicon carbide, and more particularly

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analysing the phenomena of luminescence and polytypism in the course of growing silicon carbide monocrystals and epitaxial layers from the vapour

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A sublimation technique of growing silicon carbide single crystals, comprising a parallel arrangement, opposite each other, of the evaporating surface of a

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