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An improved photoconductive switch having a SiC or other wide band gap substrate material with opposing contoured profile cavities which have a contoured

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Wide optical gap (2.0–2.5 eV) hydrogenated amorphous silicon carbide (a‐SiC:H) films were also prepared by the photochemical vapor deposition technique

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Wide band-gap semiconductors such as GaN and SiC offer significant advantages over conventional silicon devices, for performance-critical power-conversion

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3. A method of manufacturing a p-channel silicon carbide MOSFET comprising:band gap of 3 eV and which is so excellent that SiC can be used

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// Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials ARTICLE in MATERIALS

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Wide optical band-gap (2.0-2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) films have been prepared by both direct

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2016215-Silicon carbide devices when compared to silicon, enable: higher voltages, currents, temperatures, and higher thermal conductivity, and fast

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Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,

Silicon carbide embedded in carbon nanofibres: structure and

Silicon carbide embedded in carbon nanofibres (IBS), Daejon 305-701, Republic of Korea the local determination of their band gap

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of cubic (beta) silicon carbide. (Book, 1968) [WorldCat.org]

Get this from a library! The band-gap photoconductivity of high-purity single crystals of cubic (beta) silicon carbide.. [John A Detrio; PICATINNY