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implantation induced intrinsic defects in 6H-silicon carbide

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Induction of Mesothelioma after Intrapleural Inoculation of F

Objective—To find whether continuous ceramic filaments (CCFs) and silicon carbide whiskers (SiCWs), which are used in many industries as reinforcing

Induced gold atom implantation into silicon carbide |

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【PDF】Eutectic to Carbide Eutectic in Iron-Carbon-Silicon Alloys

1385 to 1391 ©2001 The Japan Institute of Metals Pressure-Induced Transition from Graphite Eutectic to Carbide Eutectic in Iron-Carbon-Silicon Alloys Akio

Induced Grain Boundary Embrittlement in Silicon Carbides.

The Japan Society of Mechanical Engineers ONLINE ISSN: 2424-2713 (As of October 01, 2017) Registered articles: 2,241 Article Volume/Iss

Silicon Carbide Static Induction Transistor And Process For

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of

Fluorination-Induced Changes in Hydrophobicity of Silicon

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defect clustering and amorphization in silicon carbide |

Irradiation-induced defect clustering and amorphization in silicon carbide - Volume 25 Issue 12 - William J. Weber, Fei Gao 2012. Combined experimental a

Carbide Fragmentation and Dissolution in a High-Carbon High-

Request PDF on ResearchGate | Carbide Fragmentation and Dissolution in a High-Carbon High-Chromium Steel Using Hot Rolling Process: Microstructure Evolution,

annealing of pre-existing defects in silicon carbide |

2015812- Silicon carbide (SiC) is a wide-band gap semiconductor1,2,3,4,5, key refractory ceramic6,7 and radiation-tolerant structural material8,9,10

Doping-induced metal-insulator transition in aluminum-doped 4

We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport

Use of Silicon Carbide in Induction in Induction Furnace |

2009224-99USE OF SILICON CARBIDE IN THE INDUCTION FURNACE by Pierre-Marie Cabanne, Sorelmetal Technical Services Silicon carbide USE OF SILIC

【PDF】Temperature Induced Voltage Offset Drifts in Silicon Carbide

IMAPS High Temperature Electronics Conference (HiTEC) | May 8-10, 2012 | Albuquerque, NM Temperature Induced Voltage Offset Drifts in Silicon Carbide

USE OF SILICON CARBIDE IN THE INDUCTION FURNACE by Francine

USE OF SILICON CARBIDE IN THE INDUCTION FURNACE2 Pages · 2006 · 44 KB · 2 Downloads · Free Book by Francine Dubé

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electronic excitations in ion-irradiated silicon carbide:

Silicon carbide single crystals were irradiated at room temperature with low energy I ions and high energy Pb ions. It is found that the damaged layer

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Induction Plasma Synthesis of Carbide Nanopowders** - PDF

Induction Plasma Synthesis of Carbide Nanopowders** By Marc Leparoux, Cornelis Schreuders, Jong-Won Shin,and Stephan Siegmann This paper presents a short

ion beam induced lateral damage on silicon carbide samples

2018328-The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely

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200553-A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structur

Europium Induced Deep Levels in Hexagonal Silicon Carbide

Silicon carbide (SiC) was investigated for deep band gap states of europium by means of deep level transient spectroscopy (DLTS). The knowledge of the

damage induced by Au-ion implantation in silicon carbide

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【PDF】Residual Stress in a Zirconium Diboride-Silicon Carbide

(C,N) Scratch-Induced Deformation and Residual Stress in a Zirconium Diboride-Silicon Carbide Composite Finite Element Modeling of Internal Stress Factors for

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Monolithic silicon carbide with interconnected and

20181231-In this work, hierarchically porous silicon carbide (SiC) monoliths (Fig. 1) were fabricated based on polycarbosilane (PCS), divinyl benzene

【PDF】low energy heavy ion irradiation in titanium silicon carbide

Microstructural changes induced by low energy heavy ion irradiation in titanium silicon carbide Jean-Christophe Napp´e, Claire Maurice, Philippe Grosseau,