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Silicon carbide - Wikipedia

Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,

SILICON CARBIDE SUBSTRATE, PROCESS FOR PRODUCING THE SAME,

PRODUCING THE SAME, AND SEMICONDUCTOR ELEMENT CONTAINING SILICON CARBIDE and a grown film of a cubic silicon carbide on a hexagonal crystal are

Observation of deep levels in cubic silicon carbide

A deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of

Diamond formation in cubic silicon carbide

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Gallium nitride transistors fabricated on cubic silicon carbide on siliconResearchers in Germany have developed gallium nitride (GaN) high-electron-mobility

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Palladium in cubic silicon carbide: Stability and kinetics

Several technological applications of siliconcarbide are concerned with the introduction of palladium impurities. Be it intentional or not, this may lead to

Nanoindentation of cubic silicon carbide on

Nanoindentation of cubic silicon carbide on silicon film Jpn. J. Appl. Phys.Zawawi,SitiHamzah,AzrulMajlis,BurhanuddinMohd-Yasin,Faisal

Visible Photoluminescence from Cubic (3C) Silicon Carbide

20141218- We present the design, fabrication, and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes

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Palladium in cubic silicon carbide: Stability and kinetics

Several technological applications of siliconcarbide are concerned with the introduction of palladium impurities. Be it intentional or not, this may lead to

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Macrodefects in Cubic Silicon Carbide Crystals

Macrodefects in Cubic Silicon Carbide CrystalsAbstract:Article Preview Different sublimation growth conditions of 3C-SiC approaching a bulk process have been

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E. (2009). Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications. Journal of

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Cubic silicon carbide implantable neural prosthetic United States Patent 9211401 Abstract: An implantable neuronal prosthetic and method of manufacture thereo

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Growth mechanism of cubic-silicon carbide nanowires

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CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, AND CUBIC

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solar cells using nanocrystalline cubic silicon carbide

Heterojunction crystalline silicon solar cells using a hydrogenated nanocrystalline cubic silicon carbide emitter has been developed. The use of the widegap

Growth Mechanism of Cubic-Silicon Carbide Nanowires : Figure 5

(b) Nanoclusters of SiC are revealed at , (c) Spherical and faceted SiC structures are shown at (inset: layers of SiC on the Si substrate), and

high-temperature furnaces for silicon carbide monocrystal

Investigation of the growth processes from vapor phase of silicon carbide Novel technique for hetero-epitaxial diamond film growth on cubic boron

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Optical properties of free-standing cubic silicon carbide

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Doping in cubic silicon#x2013;carbide

We studied the energetics and the properties of impurity states that result from doping cubic silicon–carbide (3C–SiC) with aluminum (Al), boron (B)

Near-infrared luminescent cubic silicon carbide nanocrystals

We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1–2 nm sized silicon carbide nanocrystals