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In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine

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A solar cell wafer is provided. It is a silicon wafer, and a surface of the silicon wafer has a plurality of pores, wherein based on a total

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2015430- From 20 mm to 450 mm: The Progress in Silicon Wafer Diameter NodesApril 30, 2015 Text by Takeshi Hattori In the last article, I

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A silicon-on-insulator (SOI)-wafer based dicing microscope (outer diameter (OD) 5.5 mm). oxide etch (BOE, 7:1); see Figure 4h

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A silicon carbide wafer is disclosed comprising: a single polytype single crystal; a diameter greater than 75 millimeters; a resistivity greater than

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A silicon-on-insulator (SOI)-wafer based dicing microscope (outer diameter (OD) 5.5 mm). oxide etch (BOE, 7:1); see Figure 4h