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【PDF】GA10SICP12-247

Non Repetitive TC = 95 °C Free-wheeling Silicon Carbide diode DC-Forward Current Non Repetitive Forward Current Surge Non Repetitive Forward Current

and measurements of silicon carbide power transistors (

Get this from a library! Electro-thermal simulations and measurements of silicon carbide power transistors. [Wei Liu; Kungliga Tekniska högskolan

nitride transistors fabricated on cubic silicon carbide on

Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [

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GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

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A family of 1700V and 1200 V SiC Junction Transistors from GeneSiC Semiconductor reportedly increase conversion efficiency and reduce the size/weight/volume

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Gregor Pobegens 58 research works with 553 citations and 1,774 reads, including: An adapted method for analyzing 4H silicon carbide metal-oxide-

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201959-The firm uses cascode pairs within its devices, with a Silicon carbide JFET paired with a custom-developed silicon mosfets – the latter pro

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Radiation Response of Silicon Carbide Diodes and Transistors

Radiation Response of Silicon Carbide Diodes and Transistors By Takeshi Ohshima, Shinobu Onoda, Naoya Iwamoto, Takahiro Makino, Manabu Arai and Yasunori

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This paper reports two original methods aimed for the surface recombination studies of bipolar junction transistors made on silicon carbide subject to a

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Silicon Carbide Metal-Oxide-Semiconductor Field-Effect

The 40 mOhm MSC040SMA120B next-generation 1200-V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) from Microsemi Corp.

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Radiation response of vertical structure hexagonal (4H) silicon carbide (SiC) power metal–oxide–semiconductor field effect transistors (MOSFETs) was

of commercially available silicon carbide transistors

Since the release of power SiC JFETs in 2008 and power SiC MOSFETs in 2011, there are now more choices of SiC power transistors than ever before

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201091-The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC)

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Method of fabricating silicon carbide field effect transistor

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Bulletin - Silicon Carbide Power Field-Effect Transistors

200544-Silicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs)

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ARPA-E | Utility-Scale Silicon Carbide Power Transistors

However, transistors with SiC semiconductors operate at much higher temperatures, as well as higher voltage and power levels than their silicon counterparts

Silicon carbide nanowire field effect transistors with high

We report the important performance parameters of SiC-NWFET devices including on/off current ratio (I-on/I-off), gating effect, transconductance (g(m