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Multiscale modeling of the thermal conductivity of polycrystalline silicon carbide Journal of Applied Physics 106, 083520 (2009); /p>

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A study was made of the thermal conductivity of silicon carbide, produced by reactive sintering, over the range 200–1650°C. It is shown that the

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Simplifying thermal conductivity and thermal effusivity analysis with the patented Modified Transient Plane Source technique. Silicon carbide nanowires sus

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