silicon carbide jfet

【PDF】TT Electronics - Electronics design, engineering and

We design and manufacture electronics for OEMs that sense, manage power and connect to other things - features enhanced by our global manufacturing

Silicon carbide JFET radiation response - ResearchGate

Publication » Silicon carbide JFET radiation response. Silicon carbide JFET radiation responseJ.M. McGarrity F.B. McLean W.M. DeLancey J. Palmo

Silicon Carbide Vertical JFET with Self-Aligned Nickel

Trenched implanted vertical JFETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial wafers. Gate

Large Area Silicon Carbide Vertical JFETs for 1200 V

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the

【PDF】A COMPACT MODEL FOR SILICON CARBIDE JFET

A COMPACT MODEL FOR SILICON CARBIDE JFET Konstantinos Kostopoulos, Matthias Bucher, Maria Kayambaki1, and Konstantinos Zekentes1 Dept. of Electronic and

SiC Cascodes | United Silicon Carbide Inc.

UnitedSiC’s UJ3C and UF3C silicon carbide FETs, based on a unique cascode configuration, are high performance G3 SiC fast JFETs co-packaged with a

Modelling of SiC-JFET in PSPICE

Download Citation on ResearchGate | Modelling of SiC-JFET in PSPICE | In the paper, the problem of characteristics modelling of a JFET transistor made

United Silicon Carbide Inc. | Simply More Efficient

Products SiC FETs SiC JFETs Schottky Diodes Custom SiCAnnouncements NewUnited Silicon Carbide, Inc. 7 Deer Park Drive, Suite E Monmouth Junction

SiC JFETs | United Silicon Carbide Inc.

20151216-The UJ3N series are high-performance SiC normally-on JFET transistors with options ranging from 650V to 1700V. This series exhibits ultra-lo

Silicon Carbide (SiC) - Infineon Technologies

Infineon’s broad portfolio of Silicon Carbide (SiC) CoolSiC™ Schottky diodes, SiC MOSFETs and SiC hybrid modules from 600V to 1200V combine C

Silicon Carbide Vertical JFET with Self-Aligned Nickel

Trenched implanted vertical JFETs (TI-VJFETs) with self-aligned gate and source contacts were fabricated on commercial 4H-SiC epitaxial wafers. Gate

Silicon carbide JFET radiation response - ResearchGate

Publication » Silicon carbide JFET radiation response. Silicon carbide JFET radiation responseJ.M. McGarrity F.B. McLean W.M. DeLancey J. Palmo

Applications of silicon carbide JFETs in power converters

Silicon carbide (SiC) JFET devices exhibiting normally-off characteristics have become commercially available, enabling their adoption into power supply produ

Computational Model of Silicon Carbide JFET Power Device -

The current and voltage characteristics of the silicon carbide power device is investigated, the simulation and test results indicate that the

SiC Cascodes | United Silicon Carbide Inc.

UnitedSiC’s UJ3C and UF3C silicon carbide FETs, based on a unique cascode configuration, are high performance G3 SiC fast JFETs co-packaged with a

and process developments of 4H-silicon carbide TIVJFET

10 kV, 106 mΩcm2 TIVJFET with a record-high value for figure of-merit (FOM) (VB2/R SP-ON) of 943 MW/cm2 among all normally-off SiC FETs

【PDF】TT Electronics - Electronics design, engineering and

We design and manufacture electronics for OEMs that sense, manage power and connect to other things - features enhanced by our global manufacturing

Modelling of silicon carbide JFET in SPICE

201791-Download Citation on ResearchGate | On Sep 1, 2017, Kamil Bargiel and others published Modelling of silicon carbide JFET in SPICE

and process developments of 4H-silicon carbide TIVJFET

10 kV, 106 mΩcm2 TIVJFET with a record-high value for figure of-merit (FOM) (VB2/R SP-ON) of 943 MW/cm2 among all normally-off SiC FETs

Applications of silicon carbide JFETs in power converters

Silicon carbide (SiC) JFET devices exhibiting normally-off characteristics have become commercially available, enabling their adoption into power supply produ

Large Area Silicon Carbide Vertical JFETs for 1200 V

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the

Large Area Silicon Carbide Vertical JFETs for 1200 V

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the

Computational Model of Silicon Carbide JFET Power Device -

The current and voltage characteristics of the silicon carbide power device is investigated, the simulation and test results indicate that the

Silicon Carbide (SiC) - Infineon Technologies

Infineon’s broad portfolio of Silicon Carbide (SiC) CoolSiC™ Schottky diodes, SiC MOSFETs and SiC hybrid modules from 600V to 1200V combine C

【PDF】A COMPACT MODEL FOR SILICON CARBIDE JFET

A COMPACT MODEL FOR SILICON CARBIDE JFET Konstantinos Kostopoulos, Matthias Bucher, Maria Kayambaki1, and Konstantinos Zekentes1 Dept. of Electronic and

Silicon Carbide Power Devices - Semelab | Mouser

Manufacturer of Specialty Silicon Carbide Devices for Protection and Advanced Power Conversion applications. Surge, Lightning, High Voltage.